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| MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN q 4V DRIVE q VDSS ............................................................................... -30V q rDS (ON) (MAX) ............................................................. 20m q ID ......................................................................................... -8A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings -30 20 -8 -56 -8 -2.1 -8.4 2.0 -55 ~ +150 -55 ~ +150 0.07 Unit V V A A A A A W C C g Sep.1998 L = 10H MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -8A, VGS = -10V ID = -4A, VGS = -4V ID = -8A, VGS = -10V ID = -8A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -2.0 14 26 0.112 19 3650 900 385 30 55 250 105 -0.77 -- 100 Max. -- 0.1 -0.1 -2.5 20 37 0.160 -- -- -- -- -- -- -- -- -1.20 62.5 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -4A, VGS = -10V, RGEN = RGS = 50 IS = -2.1A, VGS = 0V Channel to ambient IS = -2.1A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -102 -7 -5 -3 -2 -7 -5 -3 -2 -7 -5 -3 -2 -7 -5 -3 -2 tw = 1ms 2.0 -101 1.5 10ms 100ms Tc = 25C Single Pulse DC -100 1.0 0.5 -10-1 0 0 50 100 150 200 -10-2 -2 -10 -2-3 -5-7-10-1 -2-3 -5-7-100 -2-3 -5-7-101 -2-3 -5-7-102 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V -8V -4V -6V -5V OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -4V -5V -6V -8V -3V Tc = 25C Pulse Test DRAIN CURRENT ID (A) -40 DRAIN CURRENT ID (A) -16 -30 Tc = 25C Pulse Test -12 -20 -3V -8 -2.5V -10 PD = 2W -4 PD = 2W 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 Tc = 25C Pulse Test VGS = -4V -1.6 32 -1.2 24 -0.8 ID = -32A -24A 16 -10V -0.4 -16A -8A 8 0 -10-1 -2 -3 -5-7 -100 -2 -3 -5-7 -101 -2 -3 -5 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -40 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 Tc =25C 75C 125C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) -32 3 2 -24 101 7 5 3 2 VDS = -10V Pulse Test -16 -8 0 0 -2 -4 -6 -8 -10 100 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 -5 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Tch = 25C VDD = -15V VGS = -10V RGEN = RGS = 50 104 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 SWITCHING TIME (ns) Tch = 25C VGS = 0V f = 1MHZ Ciss 3 2 td(off) tf 102 7 5 3 2 tr 103 7 5 3 2 Coss Crss td(on) -5-7-10-1 -2 -3 -5-7 -100 -2 -3 -5-7 -101 -2 -3 101 -1 -10 -2 -3 -5 -7 -100 -2 -3 -5 -7 -101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -8A SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -40 SOURCE CURRENT IS (A) VGS = 0V Pulse Test -8 VDS = -25V -20V -10V -32 Tc = 25C 75C 125C -6 -24 -4 -16 -2 -8 0 0 20 40 60 80 100 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 VGS = -10V ID = -8A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) -2.0 VDS = -10V ID = -1mA -1.6 -1.2 100 7 5 3 2 -0.8 -0.4 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.1 0.05 PDM 0.02 0.01 Single Pulse tw T D= tw T 1.2 101 1.0 100 0.8 0.6 10-1 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 23 5710-2 23 5710-12 3 57100 2 3 57101 2 3 57102 2 3 57103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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